The Broadcom AFBR-S4N33C013 allows high packing density of the single chips using through-silicon-via (TSV) technology and a chip-sized package (CSP). Larger areas can be covered by tiling multiple AFBR-S4N33C013 CSPs, with very few edge losses. The protective layer is made by a glass highly transparent down to UV wavelengths. The protective layer results in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum.
The AFBR-S4N33C013 SiPM is designed for the detection of low-level pulsed light sources. These are especially suited for the detection of Cherenkov- or scintillation light from the most common organic (plastic) and inorganic scintillator materials (for example, LSO, LYSO, BGO, NaI, CsI, BaF, LaBr).
The AFBR-S4N33C013 NUV-HD SiPM has an operating temperature range from -40°C to +85°C, which is lead-free and RoHS compliant.