RQ3N025ATTB1

ROHM Semiconductor
755-RQ3N025ATTB1
RQ3N025ATTB1

Mfr.:

Description:
MOSFETs Pch -80V -2.5A, HSMT8, Power MOSFET

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 2,320

Stock:
2,320 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (NZD)

Qty. Unit Price
Ext. Price
$2.27 $2.27
$1.43 $14.30
$0.941 $94.10
$0.732 $366.00
$0.664 $664.00
Full Reel (Order in multiples of 3000)
$0.578 $1,734.00
$0.536 $3,216.00
$0.514 $4,626.00

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: MOSFETs
Si
SMD/SMT
HSMT-8
P-Channel
1 Channel
80 V
7 A
240 mOhms
20 V
4 V
13 nC
- 55 C
+ 150 C
14 W
Enhancement
Reel
Cut Tape
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 15 ns
Forward Transconductance - Min: 2.4 S
Product Type: MOSFETs
Rise Time: 6.4 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 8.6 ns
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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

RQxAT P-Channel MOSFETs

ROHM Semiconductor RQxAT P-Channel features surface mount packaging with low ON resistance and are 100% Rg and UIS tested. These P-channel MOSFETs offer a gate-source voltage of ±20V. The RQ3N025AT and RQ5L030AT MOSFETs feature a maximum drain-source ON resistance of 240mΩ and 99mΩ, respectively. These P-channel MOSFETs are RoHS compliant and halogen-free. The RQ3N025AT and RQ5L030AT MOSFETs offer a drain-source voltage of -80V and -60V, respectively. These P-channel MOSFETs operate within the -55°C to 150°C temperature range. Typical applications include switching and motor drives.